NAND ARRAY SOURCE/DRAIN DOPING SCHEME

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United States of America Patent

APP PUB NO 20110221006A1
SERIAL NO

12722014

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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An electronic device includes a substrate having isolation features defining active regions coextending over a surface of the substrate. The device also includes coextending line patterns crossing over the active regions, including string and ground selection lines and word lines between the string and ground selection lines. The device further includes first implant regions of a first conductivity type in the active regions between the word lines and having a first carrier concentration. The device further includes second implant regions of the first conductivity type in the active regions between edge ones of the word lines and an adjacent one of the string selection line and the ground selection line. In the device, the second implant region includes a low doping portion abutting the edge word lines and a high doping portion spaced from the edge word line by the low doping portion and having a second carrier concentration greater than the first carrier concentration.

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Patent Owner(s)

Patent OwnerAddress
SPANSION LLC900 DEGUIGNE DRIVE SUNNYVALE CA 94088

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chun San Jose, US 182 1068
Fang, Shenqing Fremont, US 127 884

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