Methods of forming a dielectric layer structure, and methods of manufacturing a capacitor using the same
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United States of America Patent
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Issued Date -
Sep 15, 2011
app pub date -
Mar 14, 2011
filing date -
Mar 15, 2010
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Abandoned
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Abstract
In a method of forming a dielectric layer structure, a precursor thin film chemisorbed on a substrate in a process chamber is formed using a source gas including a metal precursor. The process chamber is purged and pumped out to remove a remaining source gas therein and to remove any metal precursor physisorbed on the precursor thin film. The forming of the precursor thin film and the purging and pumping out of the process chamber are alternately and repeatedly performed to form a multi-layer precursor thin film. An oxidant is provided onto the multilayer precursor thin film to form a bulk oxide layer.
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