Semiconductor device having low parasitic resistance and small junction leakage characteristic and method of manufacturing the same
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United States of America Patent
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May 17, 2011
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Sep 28, 2000
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Abstract
A semiconductor device includes diffusion layers formed in a SOI layer under a side-wall, a channel formed between the diffusion layers, silicide layers sandwiching the diffusion layers wherein interface junctions between the diffusion layers and the silicide layers are (111) silicon planes.
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