TESTING METHOD FOR SEMICONDUCTOR MEMORY DEVICE

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United States of America Patent

APP PUB NO 20110228620A1
SERIAL NO

12728847

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Abstract

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A method comprises simultaneously writing a test bit to a plurality of memory cells in the selected sections of a memory array corresponding to column address signals; individually and successively reading output bits from the memory cells in one of the selected sections of a designated row of the memory array corresponding to column address signals and row address signals; and error-checking the output bits with the test bit, wherein the memory array comprises the plurality of memory cells arranged in rows and columns and the memory cells of each row are divided into a plurality of sections.

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Patent Owner(s)

Patent OwnerAddress
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INCNO 23 INDUSTRY E RD SCIENCE-BASED INDUSTRIAL PARK HSINCHU 300

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHOU, MIN CHUNG HSINCHU CITY, TW 11 43

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