SEMICONDUCTOR SEAL-RING STRUCTURE AND THE MANUFACTURING METHOD THEREOF
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United States of America Patent
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Issued Date -
Sep 29, 2011
app pub date -
Mar 29, 2010
filing date -
Oct 7, 2009
priority date (Note) -
Abandoned
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Abstract
A seal-ring structure includes a substrate, a source/drain layer, a first dielectric layer, a first lower metal layer, a gate layer and a second lower metal layer. The source/drain layer is disposed within the substrate. The first dielectric layer is disposed over the substrate. The first lower metal layer is disposed over the first dielectric layer and coupled to the source/drain layer via a first contact. The gate layer is disposed within the first dielectric layer. The second lower metal layer is disposed over the first dielectric layer and coupled to the gate layer via a second contact.
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