TRANSISTOR, SEMICONDUCTOR DEVICE AND TRANSISTOR FABRICATION PROCESS
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Oct 6, 2011
app pub date -
Mar 28, 2011
filing date -
Mar 30, 2010
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
The present invention provides a transistor, a semiconductor device and a transistor fabrication process that thoroughly ameliorate electric fields in a transistor element. Namely, the transistor includes a semiconductor substrate, incline portions, a gate electrode, side walls, and a source and a drain. The semiconductor substrate includes a protrusion portion at a surface thereof. The incline portions constitute side surface portions of the protrusion portion and are inclined from the bottom to the top of the protrusion portion. The gate electrode is formed on the top of the protrusion portion, with a gate insulation film interposed therebelow. The side walls are formed on the top of the protrusion portion at two side surfaces of the gate electrode and the gate insulation film. The source and the drain each include a low density region and a high-density region.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully