Carbon nanotube field effect transistor for printed flexible/rigid electronics
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United States of America Patent
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Issued Date -
Oct 13, 2011
app pub date -
Nov 30, 2009
filing date -
Nov 30, 2009
priority date (Note) -
Abandoned
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Abstract
Methods and devices for manufacturing carbon nanotube based field effect transistors are disclosed including providing a substrate; printing a gate electrode layer onto the substrate and sintering and/or UV curing; printing a gate isolation layer onto the gate electrode and air drying and/or UV curing; printing one or more carbon nanotube channel layers onto the gate isolation layer, wherein each carbon nanotube channel layer is air dried prior to subsequent printings; and printing a source and drain electrode layer onto the one or more carbon nanotube channel layers and sintering and/or UV curing. Other embodiments are described and claimed.
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