THIN FILM TRANSISTOR AND DISPLAY DEVICE HAVING THE SAME
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United States of America Patent
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Issued Date -
Oct 13, 2011
app pub date -
Apr 12, 2011
filing date -
Apr 12, 2010
priority date (Note) -
Abandoned
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Abstract
The described technology relates generally to a thin film transistor comprising a gate electrode, a semiconductor layer and source/drain electrode, wherein the source/drain electrode is disposed in a range of a region in which the semiconductor layer is formed. Therefore, the present embodiments can provide a thin film transistor in which reliability is excellent because a change amount of threshold voltage is small.
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