VIA STRUCTURE OF A SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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United States of America Patent
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Issued Date -
Oct 13, 2011
app pub date -
Apr 6, 2011
filing date -
Apr 7, 2010
priority date (Note) -
Abandoned
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Abstract
Semiconductor devices, such as GaN HEMT and HFET devices, and methods of forming such devices, with a via that provides an electrical connection between a contact and a corresponding external contact pad. Embodiments include semiconductor devices with a via extending through a dielectric material to connect a gate to a corresponding external contact pad, and semiconductor devices with a via extending through a dielectric material to connect an Ohmic contact and a corresponding external contact pad. Embodiments also include semiconductor devices with a via connecting an external contact pad to a gate that is formed above a dielectric material.
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