WRITE SCHEME IN PHASE CHANGE MEMORY
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United States of America Patent
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Issued Date -
Oct 27, 2011
app pub date -
Apr 26, 2011
filing date -
Apr 26, 2010
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A method for writing a phase change memory includes receiving an input data corresponding to a plurality of memory cells, while reading a previous data from the plurality of memory cells and comparing the input data with the previous data. Upon determining that the input data is different from the previous data for one or more of the plurality of memory cells, and upon determining that a current value of a write counter is less than a maximum value, one or more of the plurality of memory cells is programmed with the input data and the current value of the writer counter is incremented.
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