GAS DEPOSITION REACTOR
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United States of America Patent
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Issued Date -
Nov 3, 2011
app pub date -
Feb 11, 2010
filing date -
Feb 13, 2009
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Abstract
A reactor is provided for a gas deposition method, in which method the surface of a substrate is subjected to alternate starting material surface reactions. The reactor includes a first chamber, a second chamber mounted inside the first chamber, and heating means for heating the first chamber. The reactor also includes one or more heat transfer elements for equalising temperature differences inside the first chamber.
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