Semiconductor memristor devices
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United States of America Patent
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May 28, 2013
Grant Date -
Nov 3, 2011
app pub date -
Jan 26, 2009
filing date -
Jan 26, 2009
priority date (Note) -
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Abstract
Various embodiments of the present invention are directed to electronic devices, which combine reconfigurable diode rectifying states with nonvolatile memristive switching. In one aspect, an electronic device (210,230,240) comprises an active region (212) sandwiched between a first electrode (104) and a second electrode (106). The active region includes two or more semiconductor layers and at least one dopant that is capable of being selectively positioned within the active region to control the flow of charge carriers through the device.
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