WAFER LEVEL LED INTERPOSER
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United States of America Patent
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Issued Date -
Nov 10, 2011
app pub date -
May 2, 2011
filing date -
May 6, 2010
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A wafer level LED interposer and its manufacturing method is provided. The wafer level LED interposer includes: a LED chip of which N-type electrode and p-type electrode are formed on the upper side; an interposer substrate formed with through vias at each position corresponding to the N-type electrode and the p-type electrode and bonded to the upper side of the LED chip, wherein the N-type electrode and p-type electrode are connected to each through via; a redistribution layer formed on the upper surface of the interposer substrate and electrically connected to the through vias; a solder resist layer coated on the upper surface of the interposer substrate for a part of the redistribution layer selectively to be opened; and an external connector formed at the position where the redistribution layer is opened.
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