FUSION BONDING PROCESS AND STRUCTURE FOR FABRICATING SILICON-ON-INSULATION (SOI) SEMICONDUCTOR DEVICES
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Jul 22, 2011
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Oct 28, 2005
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Abstract
A method of fabricating a semiconductor-on-insulator device including: providing a first semiconductor wafer having an about 500 angstrom thick oxide layer thereover; etching the first semiconductor wafer to raise a pattern therein; doping the raised pattern of the first semiconductor wafer through the about 500 angstrom thick oxide layer; providing a second semiconductor wafer having an oxide thereover; and, bonding the first semiconductor wafer oxide to the second semiconductor wafer oxide at an elevated temperature.
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