MEMORY EMPLOYING DIAMOND-LIKE CARBON RESISTIVITY-SWITCHABLE MATERIAL AND METHODS OF FORMING THE SAME
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United States of America Patent
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Issued Date -
Nov 17, 2011
app pub date -
May 14, 2010
filing date -
May 14, 2010
priority date (Note) -
Abandoned
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Abstract
In a first aspect, a method of forming a memory cell having a diamond like carbon (DLC) resistivity-switching material is provided that includes (1) forming a metal-insulator-metal (MIM) stack that includes (a) a first conductive layer; (b) a DLC switching layer above the first conductive layer; and (c) a second conductive layer above the DLC switching layer; (2) forming a compressive dielectric liner along a sidewall of the MIM stack; and (3) forming a steering element coupled to the MIM stack. Numerous other aspects are provided.
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