METHOD AND APPARATUS FOR IMPROVED WAFER SINGULATION
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United States of America Patent
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app pub date -
Mar 30, 2011
filing date -
Apr 2, 2010
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Abstract
Laser singulation of electronic devices from semiconductor substrates including wafers is performed using up to 3 lasers from 2 wavelength ranges. Using up to 3 lasers from 2 wavelength ranges permits laser singulation of wafers held by die attach film while avoiding problems caused by single-wavelength dicing. In particular, using up to 3 lasers from 2 wavelength ranges permits efficient dicing of semiconductor wafers while avoiding debris and thermal problems associated with laser processing die attach tape.
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