METHOD FOR DEPOSITING ULTRA FINE GRAIN POLYSILICON THIN FILM
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United States of America Patent
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Issued Date -
Dec 1, 2011
app pub date -
Apr 29, 2009
filing date -
May 2, 2008
priority date (Note) -
Abandoned
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Abstract
According to the present invention, a method for depositing an ultra-fine crystal particle polysilicon thin film supplies a source gas in a chamber loaded with a substrate to deposit a polysilicon thin film on the substrate, wherein the source gas contains a silicon-based gas, a nitrogen-based gas and a phosphorous-based gas. The mixture ratio of the nitrogen-based gas to the silicon-based gas among the source gas may be 0.03 or lower (but, excluding zero). Nitrogen in the thin film may be 11.3 atomic percent or lower (but, excluding zero).
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