CONTROLLED PROCESS AND RESULTING DEVICE
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United States of America Patent
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Issued Date -
Dec 1, 2011
app pub date -
Aug 10, 2011
filing date -
May 12, 1997
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method for forming a multi-material thin film includes providing a multi-material donor substrate comprising single crystal silicon and an overlying film comprising GaN or SiC. Energetic particles are introduced through a surface of the multi-material donor substrate to a selected depth within the single crystal silicon. The method includes providing energy to a selected region of the donor substrate to initiate a controlled cleaving action in the donor substrate. Then, a cleaving action is made using a propagating cleave front to free a multi-material film from a remaining portion of the donor substrate, the multi-material film comprising single crystal silicon and the overlying film.
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