METHOD OF SEMICONDUCTOR WAFER BACK PROCESSING, METHOD OF SUBSTRATE BACK PROCESSING, AND RADIATION-CURABLE PRESSURE-SENSITIVE ADHESIVE SHEET
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United States of America Patent
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app pub date -
Aug 12, 2011
filing date -
Aug 29, 2006
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Abandoned
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Abstract
The present invention relates to a method of semiconductor wafer back processing, which includes applying a radiation-curable pressure-sensitive adhesive sheet comprising a base film and a pressure-sensitive adhesive layer disposed on one side of the base film to a front side of a semiconductor wafer, the front side of the semiconductor wafer having recesses and protrusions; grinding the back side of the semiconductor wafer in such a state that the radiation-curable pressure-sensitive adhesive sheet is adherent to the front side of the semiconductor; and irradiating the pressure-sensitive adhesive sheet with a radiation to thereby cure the pressure-sensitive adhesive layer, followed by subjecting said ground back side of the semiconductor wafer to a surface treatment; and a radiation-curable pressure-sensitive adhesive sheet for use in the method of semiconductor wafer back processing.
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