US Patent Application No: 2011/0305,831

Number of patents in Portfolio can not be more than 2000

Method for chemical vapor deposition control

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Abstract

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A method of depositing a thin film on a substrate in a deposition system is described. The method includes disposing a gas heating device comprising a plurality of heating element zones in a deposition system, and independently controlling a temperature of each of the plurality of heating element zones, wherein each of the plurality of heating element zones having one or more resistive heating elements. Additionally, the method includes providing a substrate on a substrate holder in the deposition system, wherein the substrate holder has one or more temperature control zones. The method further includes providing a film forming composition to the gas heating device coupled to the deposition system, pyrolyzing one or more constituents of the film forming composition using the gas heating device, and introducing the film forming composition to the substrate in the deposition system to deposit a thin film on the substrate.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
TOKYO ELECTRON LIMITEDTOKYO4816

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Faguet, Jacques Gilbert, AZ 47 139
Lee, Eric M Austin, TX 38 128
Strang, Eric J Chandler, AZ 117 549

Cited Art Landscape

Patent Info (Count) # Cites Year
 
LAM RESEARCH CORPORATION (1)
* 2009/0111,276 Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body 13 2008
 
UNIVERSITY OF MARYLAND, BALTIMORE (1)
* 6,821,910 Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation 37 2003
* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
TOKYO ELECTRON LIMITED (2)
* 8,291,856 Gas heating device for a vapor deposition system 1 2008
* 8,272,347 High temperature gas heating device for a vapor deposition system 2 2009
* Cited By Examiner