US Patent Application No: 2011/0305,831

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Method for chemical vapor deposition control

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Abstract

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A method of depositing a thin film on a substrate in a deposition system is described. The method includes disposing a gas heating device comprising a plurality of heating element zones in a deposition system, and independently controlling a temperature of each of the plurality of heating element zones, wherein each of the plurality of heating element zones having one or more resistive heating elements. Additionally, the method includes providing a substrate on a substrate holder in the deposition system, wherein the substrate holder has one or more temperature control zones. The method further includes providing a film forming composition to the gas heating device coupled to the deposition system, pyrolyzing one or more constituents of the film forming composition using the gas heating device, and introducing the film forming composition to the substrate in the deposition system to deposit a thin film on the substrate.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
TOKYO ELECTRON LIMITEDTOKYO5697

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Faguet, Jacques Gilbert, AZ 46 133
Lee, Eric M Austin, TX 37 122
Strang, Eric J Chandler, AZ 115 516

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
TOKYO ELECTRON LIMITED (2)
8,291,856 Gas heating device for a vapor deposition system 1 2008
8,272,347 High temperature gas heating device for a vapor deposition system 2 2009