Polymeric Barrier Removal Polishing Slurry
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United States of America Patent
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Issued Date -
Dec 29, 2011
app pub date -
Jun 24, 2010
filing date -
Jun 24, 2010
priority date (Note) -
Abandoned
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Abstract
The invention provides a aqueous slurry useful for chemical mechanical polishing a semiconductor substrate having copper interconnects. The slurry comprises by weight percent, 0 to 25 oxidizing agent, 0.1 to 50 abrasive particles, 0.001 to 10 inhibitor for decreasing static etch of the copper interconnects, 0.001 to 5 poly(methyl vinyl ether) having a formula as follows:and the poly(methyl vinyl ether) is water soluble and n has a value of at least 5, 0.005 to 1 aminobutyric acid, 0.01 to 5 phosphorus-containing compound, 0 to 10 copper complexing agent formed during polishing and balance water.
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