Electrode structure, method of fabricating the same, and semiconductor device including the electrode structure
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United States of America Patent
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Dec 1, 2015
Grant Date -
Jan 5, 2012
app pub date -
Jun 27, 2011
filing date -
Jul 2, 2010
priority date (Note) -
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Abstract
An electrode structure is disclosed. The electrode structure includes a first polysilicon layer doped with resistance adjustment impurities; a second polysilicon layer for adjusting grains, formed in the first polysilicon layer and doped with grain adjustment impurities; an ohmic metal layer formed on the first and second polysilicon layers; a barrier metal layer formed on the ohmic metal layer; and a metal layer formed on the barrier metal layer.
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