Indirect-bandgap-semiconductor, light-emitting diode
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United States of America Patent
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Jun 25, 2013
Grant Date -
Jan 19, 2012
app pub date -
Mar 23, 2009
filing date -
Mar 23, 2009
priority date (Note) -
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status (Latency Note)
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Abstract
An indirect-bandgap-semiconductor, light-emitting diode. The indirect-bandgap-semiconductor, light-emitting diode includes a plurality of portions including a p-doped portion of an indirect-bandgap semiconductor, an intrinsic portion of the indirect-bandgap semiconductor, and a n-doped portion of the indirect-bandgap semiconductor. The intrinsic portion is disposed between the p-doped portion and the n-doped portion and forms a p-i junction with the p-doped portion, and an i-n junction with the n-doped portion. The p-i junction and the i-n junction are configured to facilitate formation of at least one hot electron-hole plasma in the intrinsic portion when the indirect-bandgap-semiconductor, light-emitting diode is reverse biased and to facilitate luminescence produced by recombination of a hot electron with a hole.
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