Fuse structure having crack stop void, method for forming and programming same, and design structure
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United States of America Patent
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Nov 26, 2013
Grant Date -
Jan 19, 2012
app pub date -
Jul 19, 2010
filing date -
Jul 19, 2010
priority date (Note) -
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status (Latency Note)
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Abstract
The disclosure relates generally to fuse structures, methods of forming and programming the same, and more particularly to fuse structures having crack stop voids. The fuse structure includes a semiconductor substrate having a dielectric layer thereon and a crack stop void. The dielectric layer includes at least one fuse therein and the crack stop void is adjacent to two opposite sides of the fuse, and extends lower than a bottom surface and above a top surface of the fuse. The disclosure also relates to a design structure of the aforementioned.
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