PLASMA MEDIATED ASHING PROCESSES
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United States of America Patent
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Issued Date -
Feb 2, 2012
app pub date -
Jul 27, 2010
filing date -
Jul 27, 2010
priority date (Note) -
Abandoned
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Abstract
Plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.
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