ARRANGEMENT AND METHOD FOR MEASUREMENT OF THE TEMPERATURE AND OF THE THICKNESS GROWTH OF SILICON RODS IN A SILICON DEPOSITION REACTOR
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United States of America Patent
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Issued Date -
Feb 2, 2012
app pub date -
Jan 28, 2010
filing date -
Jan 29, 2009
priority date (Note) -
Abandoned
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Abstract
An arrangement for measurement of temperature and thickness growth of silicon rods in a silicon deposition reactor employs a temperature measurement device located outside the reactor. Continuous temperature measurement and measurement of the thickness growth throughout the entire deposition process is achieved with a contactlessly operating temperature measurement device arranged outside the silicon deposition reactor in front of a viewing window. The temperature measurement device can be pivoted horizontally about a rotation axis by a rotating drive. The pivoting axis runs parallel to a longitudinal axis of the silicon rod, and the central axis of the temperature measurement device runs through the pivoting axis.
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