Gallium-Containing Transition Metal Thin Film for CIGS Nucleation
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United States of America Patent
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Issued Date -
Feb 9, 2012
app pub date -
Aug 4, 2010
filing date -
Aug 4, 2010
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Abandoned
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Abstract
A solar cell comprises a substrate, a first transition metal layer comprising an alkali element or an alkali compound located over the substrate, a second transition metal layer comprising gallium located over the first transition metal layer, at least one p-type semiconductor absorber layer including a copper indium selenide (CIS) based alloy material located over the second transition metal layer, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a top electrode located over the n-type semiconductor layer.
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