METHOD AND APPARATUS FOR IRRADIATING A SEMICONDUCTOR MATERIAL SURFACE BY LASER ENERGY
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Dec 21, 2009
filing date -
Jan 26, 2009
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A method for irradiating semiconductor material including irradiating a region of a semiconductor material layer surface with a first laser having laser irradiation parameters to melt at least a part of the region and controlling the irradiation process by adapting the irradiation parameters by determining the depth of the melted region part. An apparatus for irradiating semiconductor material is disclosed which has a first laser for irradiating a region of a semiconductor layer surface to melt at least a part of the region. The laser having laser irradiation parameters and a controller for controlling the irradiation process by adapting the laser irradiation parameters by determining the depth of the melted region part.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully