Tunneling field-effect transistor with low leakage current

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United States of America Patent

PATENT NO 8309989
APP PUB NO 20120043607A1
SERIAL NO

12858465

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Abstract

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Illustrative embodiments of a vertical tunneling field effect transistor are disclosed which may comprise a semiconductor body including a source region doped with a first dopant type and a pocket region doped with a second dopant type, where the pocket region is formed above the source region. The transistor may also comprise an insulated gate formed above the source and pocket regions, the insulated gate being configured to generate electron tunneling between the source and pocket regions if a voltage is applied to the insulated gate. The transistor may further comprise a lateral tunneling barrier formed to substantially prevent electron tunneling between the source region and a drain region of the semiconductor body, where the drain region is doped with the second dopant type.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
PURDUE RESEARCH FOUNDATIONWEST LAFAYETTE, IN929

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Agarwal, Samarth West Lafayette, US 4 9
Klimeck, Gerhard West Lafayette, US 6 21
Luisier, Mathieu West Lafayette, US 1 8

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