Methods of forming gate structure and methods of manufacturing semiconductor device including the same
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United States of America Patent
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Jun 4, 2013
Grant Date -
Mar 22, 2012
app pub date -
Sep 8, 2011
filing date -
Sep 20, 2010
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Abstract
A method of forming agate structure having an improved electric characteristic is disclosed. A gate insulating layer is formed on a substrate and a metal layer is formed on the gate insulating layer. Then, an amorphous silicon layer is formed on the metal layer by a physical vapor deposition (PVD) process. An impurity doped polysilicon layer is formed on the amorphous silicon layer. Formation of an oxide layer at an interface between the amorphous silicon layer and the metal layer may be prevented.
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