Vacuum Processing Apparatus, Vacuum Processing Method, and Micro-Machining Apparatus
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United States of America Patent
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Issued Date -
Mar 22, 2012
app pub date -
Sep 15, 2011
filing date -
Sep 17, 2010
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
Disclosed is a technology in which a nozzle part is mounted in a vacuum chamber and a silicon substrate is held to face a discharge hole of the nozzle part. For example, ClF3 gas and Ar gas are supplied from the nozzle part and the mixed gas is discharged from the nozzle part under a vacuum atmosphere. By doing this, the mixed gas is adiabatically expanded and the Ar atoms or ClF3 molecules are combined, which become a gas cluster. The gas cluster is irradiated to the surface of the silicon substrate without being ionized and, as a result, the surface of the silicon surface becomes a porous state. Then, lithium is grown on the surface of the silicon substrate in a separate vacuum chamber 41 by sputtering without breaking the vacuum.
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