CMOS image sensor and fabricating method thereof
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United States of America Patent
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Mar 25, 2014
Grant Date -
Apr 19, 2012
app pub date -
Sep 22, 2011
filing date -
May 6, 2004
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Abstract
A method includes: forming a transfer gate on a semiconductor substrate; forming a first ion implantation region on a first side of the transfer gate; forming a second ion implantation region on the first side of the transfer gate such that the second ion implantation region encloses the first ion implantation region; forming a third ion implantation region along a surface of the semiconductor substrate; and forming a floating diffusion region at a second side of the transfer gate.
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