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Abstract

A molecular beam epitaxy apparatus for producing wafers of semiconductor material includes a growth chamber surrounding a process area, a main cryogenic panel having a lateral part covering the inner surface of the lateral wall of the growth chamber, a sample holder, at least one effusion cell able to evaporate a material, a gas injector to inject a gaseous precursor into the growth chamber, a pumping element connected to the growth chamber to provide high vacuum capability. The apparatus includes an insulation enclosure covering at least the inner surfaces of the growth chamber walls, the insulation enclosure including cold parts having a temperature T_min≦melting point of the gaseous precursor, and hot parts having a temperature T_min≧a temperature wherein the desorption rate of the gaseous precursor on the hot parts is at least 1000 times greater than the adsorption rate of the gaseous precursor.

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First Claim