ELECTRICAL CONTACT FOR A DEEP BURIED LAYER IN A SEMI-CONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Apr 26, 2012
app pub date -
Sep 22, 2011
filing date -
Oct 26, 2010
priority date (Note) -
Abandoned
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Abstract
A semi-conductor device includes at least one deep buried layer with an electrical connection made thereto by an electrical contact. The electrical contact to the deep buried layer is made by formed an opening through the use of a first chemical attack and a second chemical attack after the first chemical attack. By making an opening, the electrical contact can be made with the deep buried layer without at the same time occupying excessively wide portions of the device. For example, it is possible to make electrical contacts having a width of less than 1.5 μm with deep layers having a depth of more than 5 μm.
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