SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

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United States of America Patent

SERIAL NO

13241353

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Abstract

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A method for manufacturing a semiconductor device formed by fractionization and division after a plurality of semiconductor elements are formed over a semiconductor substrate, includes forming a first resist portion over the semiconductor substrate prior to its fractionization. Trenches are formed in areas for dicing the semiconductor substrate. A second resin portion different in composition from the first resin portion is formed in each of the trenches. The semiconductor substrate is diced with respect to the second resin portion with widths each narrower than the trench thereby to bring the semiconductor device into fractionization and division.

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Patent Owner(s)

Patent OwnerAddress
OKI SEMICONDUCTOR CO LTD550-1 HIGASHIASAKAWA-CHO HACHIOJI-SHI TOKYO 193-8550

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
ITOH, Yoshio Tokyo, JP 30 249
Kushima, Yoshimasa Yamanashi, JP 5 27
Uchida, Hirokazu Tokyo, JP 7 43

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