Plasma Etch Resistant, Highly Oriented Yttria Films, Coated Substrates and Related Methods
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United States of America Patent
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Issued Date -
May 3, 2012
app pub date -
Oct 24, 2011
filing date -
Oct 25, 2010
priority date (Note) -
Abandoned
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Abstract
Included within the scope of the invention are plasma etch-resistant films for substrates. The films include a yttria material and a at least a portion of the yttria material is in a crystal phase having an orientation defined by a Miller Index notation {111}. Also included are methods of manufacturing plasma etch-resistant films on a substrate. Such methods include applying a yttria material-containing composition onto at least a portion of a surface of a substrate to form a film. The film includes a yttria material and at least a portion of the yttria material is in a crystal phase having an orientation defined by a Miller Index notation {111}.
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