MAGNETIC TUNNEL JUNCTION CELLS HAVING PERPENDICULAR ANISOTROPY AND ENHANCEMENT LAYER
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United States of America Patent
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Issued Date -
May 3, 2012
app pub date -
Nov 1, 2010
filing date -
Nov 1, 2010
priority date (Note) -
Abandoned
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Abstract
A magnetic tunnel junction cell that includes a ferromagnetic free layer; an enhancement layer having a thickness of at least about 15 Å; an oxide barrier layer; and a ferromagnetic reference layer, wherein the enhancement layer and the oxide barrier layer are positioned between the ferromagnetic reference layer and ferromagnetic free layer and the oxide barrier layer is positioned adjacent the ferromagnetic reference layer, and wherein the ferromagnetic free layer, the ferromagnetic reference layer, and the enhancement layer all have magnetization orientations that are out-of-plane
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