US Patent Application No: 2012/0113,722

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Selecting programming voltages in response to at least a data latch in communication with a sense amplifier

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Abstract

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Memory devices and methods of programming memory cells including selecting a voltage to apply to a control gate of the memory cell during programming of a data value of a sense amplifier to the memory cell in response to at least a data value contained in a data latch that is in communication with the sense amplifier.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
MICRON TECHNOLOGY, INC.BOISE, ID20763

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aritome, Seiichi Yokohama, JP 443 4140

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