US Patent Application No: 2012/0113,722

Selecting programming voltages in response to at least a data latch in communication with a sense amplifier

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May 10, 2012
Publication date
Oct 31, 2011
filing date
13/285,697
serial no
Granted
status

ALSO PUBLISHED AS: 8339858

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Abstract

Memory devices and methods of programming memory cells including selecting a voltage to apply to a control gate of the memory cell during programming of a data value of a sense amplifier to the memory cell in response to at least a data value contained in a data latch that is in communication with the sense amplifier.

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Patent Owner(s)

Patent Owner	Address	Total Patents
MICRON TECHNOLOGY, INC.	BOISE, ID	18599

International Classification(s)

G11C:STATIC STORES

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[Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Aritome, Seiichi	Yokohama, JP	376	3572

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