US Patent Application No: 2012/0113,722

Number of patents in Portfolio can not be more than 2000

Selecting programming voltages in response to at least a data latch in communication with a sense amplifier

ALSO PUBLISHED AS: 8339858

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Abstract

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Memory devices and methods of programming memory cells including selecting a voltage to apply to a control gate of the memory cell during programming of a data value of a sense amplifier to the memory cell in response to at least a data value contained in a data latch that is in communication with the sense amplifier.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
MICRON TECHNOLOGY, INC.BOISE, ID18642

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aritome, Seiichi Yokohama, JP 462 4590

Cited Art Landscape

Patent Info (Count) # Cites Year
 
MICRON TECHNOLOGY, INC. (5)
* 6,654,272 Flash cell fuse circuit 27 2001
* 6,845,029 Flash cell fuse circuit 23 2003
* 7,002,828 Flash cell fuse circuit 11 2003
* 7,277,311 Flash cell fuse circuit 1 2005
* 7,400,532 Programming method to reduce gate coupling interference for non-volatile memory 29 2006
* Cited By Examiner

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