Implementation of co-gases for germanium and boron ion implants

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United States of America Patent

PATENT NO 9984855
SERIAL NO

12948309

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Abstract

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An ion implantation system for improving performance and extending lifetime of an ion source is disclosed. A fluorine-containing dopant gas source is introduced into the ion chamber along with one or more co-gases. The one or more co-gases can include hydrogen or krypton. The co-gases mitigate the effects caused by free fluorine ions in the ion source chamber which lead to ion source failure.

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Patent Owner(s)

Patent OwnerAddress
AXCELIS TECHNOLOGIES INC108 CHERRY HILL DRIVE BEVERLY MA 01915-1053

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Colvin, Neil K Merrimack, US 27 130
Hsieh, Tseh-Jen Rowley, US 30 129

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