LAYOUT OF POWER MOSFET
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United States of America Patent
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Issued Date -
May 17, 2012
app pub date -
Nov 17, 2010
filing date -
Aug 16, 2010
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A layout of a power MOSFET includes a first zigzag gate structure located on a substrate of the power MOSFET and having a first side and a second side, a first contact located on the substrate and at the first side of the first zigzag gate structure, and a second contact structure located on the substrate and at the second side of the first zigzag gate structure.
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