SEMICONDUCTOR DEVICE WITH LATERAL ELEMENT
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United States of America Patent
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Issued Date -
May 17, 2012
app pub date -
Nov 14, 2011
filing date -
Nov 15, 2010
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
In a semiconductor device in which a first electrode and a second electrode are disposed on a surface of a first conductivity-type semiconductor layer of a semiconductor substrate and a lateral element is formed to cause an electric current between the first electrode and the second electrode, a scroll-shaped resistive field plate is disposed on the semiconductor layer across an insulation film. The resistive field plate extends toward the second electrode while surrounding a periphery of the first electrode in a scroll shape. A resistance value of a total resistance of the resistive field plate is in a range between 90 kΩ and 90 MΩ.
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