METHOD FOR FABRICATING A SEMICONDUCTOR SUBSTRATE WITH A CO-PLANAR BACKSIDE METALLIZATION STRUCTURE
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United States of America Patent
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app pub date -
Feb 3, 2012
filing date -
Dec 9, 2008
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Abstract
A method for fabricating a backside metallization structure on a semiconductor substrate including moving a printhead having at least one nozzle orifice relative to the semiconductor substrate, and feeding an Al passivation layer ink and an AgAl soldering pad ink through said printhead such that both said Al passivation layer ink and said AgAl soldering pad ink are simultaneously extruded from said at least one nozzle orifice and deposited onto the semiconductor substrate.
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