US Patent Application No: 2012/0132,972

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SEMICONDUCTOR STORAGE DEVICE

ALSO PUBLISHED AS: 8378499

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Abstract

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A semiconductor storage device with active regions formed in the shape of a band in a substrate; a plurality of word lines arranged at equal intervals that intersect the active regions; cell contacts that includes first cell contacts in the active regions in the center portions in a longitudinal direction, and second cell contacts at both ends in the longitudinal direction; bit line contacts on the first cell contacts; bit lines that pass over the bit line contacts; storage node contacts on the second cell contacts; storage node contact pads on the storage node contacts; and storage capacitors on the storage node contact pads. The center positions of the storage node contacts are offset from the center positions of the second cell contacts. The center positions of the storage node contact pads are offset from the center positions of the storage node contacts.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
PS4 LUXCO S.A.R.L.LUXEMBOURG, LU2012

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hasunuma, Eiji Hyogo, JP 31 30

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
SAMSUNG ELECTRONICS CO., LTD. (1)
8,497,207 Methods of forming semiconductor devices including landing pads formed by electroless plating 0 2010
 
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION (1)
8,269,311 Multilayer oxide on nitride on oxide structure and method for the manufacture of semiconductor devices 0 2010