A semiconductor storage device with active regions formed in the shape of a band in a substrate; a plurality of word lines arranged at equal intervals that intersect the active regions; cell contacts that includes first cell contacts in the active regions in the center portions in a longitudinal direction, and second cell contacts at both ends in the longitudinal direction; bit line contacts on the first cell contacts; bit lines that pass over the bit line contacts; storage node contacts on the second cell contacts; storage node contact pads on the storage node contacts; and storage capacitors on the storage node contact pads. The center positions of the storage node contacts are offset from the center positions of the second cell contacts. The center positions of the storage node contact pads are offset from the center positions of the storage node contacts.
* 2004/0004,257 Dynamic random access memory cells having laterally offset storage nodes, and fabrication methods thereof
* 2003/0235,946 Methods of forming integrated circuit memory devices that include a plurality of landing pad holes that are arranged in a staggered pattern and integrated circuit memory devices formed thereby
* 2006/0211,192 SEMICONDUCTOR MEMORY DEVICE INCLUDING STORAGE NODES AND RESISTORS AND METHOD OF MANFACTURING THE SAME
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