METHOD OF NANOSTRUCTURING A FILM OR A WAFER OF MATERIAL OF THE METAL OXIDE OR SEMI-CONDUCTOR TYPE
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United States of America Patent
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Issued Date -
May 31, 2012
app pub date -
May 12, 2010
filing date -
May 14, 2009
priority date (Note) -
Abandoned
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Abstract
A method for nanostructuring a film (2) of material includes a step of immersing the film (2) of material in an aqueous solution (3), during which an interference FIG. 6) including illuminated areas (6b) and dark areas (6a) is applied to at least one of the faces of the film (2). The material is a semiconductor inorganic material or oxide, which is able to be solubilised in aqueous solution under the effect of the absorption of light. The nanostructuring of the film (2) is effected, at its surface in contact with the aqueous solution (3), by photodissolution in the illuminated areas (6a) and/or by growth in the dark areas (6b) of the interference FIG. 6). Also described is a nanostructured coating film (5) obtained according to such a preparation method, as well as a nanostructured 3D film.
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