Method of manufacturing non-volatile memory module
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United States of America Patent
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Jul 9, 2013
Grant Date -
May 31, 2012
app pub date -
Feb 5, 2012
filing date -
Apr 22, 2008
priority date (Note) -
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Abstract
A highly reliable large capacity phase change memory module is realized. A semiconductor device according to the present invention includes a memory array having a structure in which a storage layer using a chalcogenide material and a memory cell constituted of a diode are stacked, and an initialization condition and a rewriting condition are changed in accordance with the layer where a selected memory cell is located. A current mirror circuit is selected in accordance with an operation, and at the same time, the initialization condition and the rewriting condition (here, reset condition) are changed in accordance with the operation by a control mechanism of the reset current in a voltage selection circuit and a current mirror circuit.
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