US Patent Application No: 2012/0138,956

Number of patents in Portfolio can not be more than 2000

COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

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Abstract

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A compound semiconductor device includes: a substrate; an electron transit layer formed over the substrate; an electron supply layer formed over the electron transit layer; and a buffer layer formed between the substrate and the electron transit layer and including AlxGa1-xN(0≦x≦1), wherein the x value represents a plurality of maximums and a plurality of minimums in the direction of the thickness of the buffer layer, and the variation of x in any area having a 1 nm thickness in the buffer layer is 0.5 or less.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
FUJITSU LIMITEDKAWASAKI17374

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Imanishi, Kenji Kawasaki, JP 58 382
Miyajima, Toyoo Kawasaki, JP 18 37
SHIMIZU, Sanae Kawasaki, JP 12 19
Yamada, Atsushi kawasaki, JP 241 1167

Cited Art Landscape

Patent Info (Count) # Cites Year
 
LG INNOTEK CO., LTD. (1)
* 2009/0179,221 SEMICONDUCTOR LIGHT EMITTING DEVICE 4 2009
 
XEROX CORPORATION (1)
* 2003/0118,066 Graded semiconductor layers for reducing threshold voltage for a nitride-based laser diode structure 15 2001
 
RENESAS ELECTRONICS CORPORATION (1)
* 2009/0045,438 FIELD EFFECT TRANSISTOR, AND MULTILAYERED EPITAXIAL FILM FOR USE IN PREPARATION OF FIELD EFFECT TRANSISTOR 88 2006
 
NATIONAL UNIVERSITY CORPORATION NAGOYA INSTITUTE OF TECHNOLOGY (1)
* 2011/0001,127 SEMICONDUCTOR MATERIAL, METHOD OF MAKING THE SAME, AND SEMICONDUCTOR DEVICE 15 2008
 
The Furukawa Electric Co., Ltd. (1)
* 2013/0307,024 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 2 2013
 
FUJITSU LIMITED (1)
* 2011/0031,532 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 21 2010
 
SANKEN ELECTRIC CO., LTD. (5)
* 2010/0244,096 SEMICONDUCTOR DEVICE 5 2010
* 8,247,842 Nitride semiconductor device having graded aluminum content 1 2010
* 2011/0006,308 SEMICONDUCTOR DEVICE 6 2010
* 2011/0073,911 SEMICONDUCTOR DEVICE 2 2010
* 2013/0248,815 SEMICONDUCTOR PHOTOCATHODE AND METHOD FOR MANUFACTURING THE SAME 2 2013
 
TRANSPHORM INC. (1)
* 2012/0126,239 LAYER STRUCTURES FOR CONTROLLING STRESS OF HETEROEPITAXIALLY GROWN III-NITRIDE LAYERS 11 2010
* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
INTERNATIONAL RECTIFIER CORPORATION (3)
* 8,981,380 Monolithic integration of silicon and group III-V devices 0 2010
9,219,058 Efficient high voltage switching circuits and monolithic integration of same 0 2011
* 2011/0210,338 Efficient High Voltage Switching Circuits and Monolithic Integration of Same 15 2011
 
FUJITSU LIMITED (4)
* 9,502,525 Compound semiconductor device and method of manufacturing the same 0 2012
* 2013/0256,682 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 2 2012
* 9,184,241 Semiconductor apparatus 0 2013
* 2014/0091,314 SEMICONDUCTOR APPARATUS 5 2013
 
INFINEON TECHNOLOGIES AUSTRIA AG (1)
* 9,356,118 Metalization of a field effect power transistor 0 2015
* Cited By Examiner