US Patent Application No: 2012/0138,956

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COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A compound semiconductor device includes: a substrate; an electron transit layer formed over the substrate; an electron supply layer formed over the electron transit layer; and a buffer layer formed between the substrate and the electron transit layer and including AlxGa1-xN(0≦x≦1), wherein the x value represents a plurality of maximums and a plurality of minimums in the direction of the thickness of the buffer layer, and the variation of x in any area having a 1 nm thickness in the buffer layer is 0.5 or less.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
FUJITSU LIMITEDKAWASAKI23266

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Imanishi, Kenji Kawasaki, JP 77 128
Miyajima, Toyoo - 17 3
Shimizu, Sanae - 15 5
Yamada, Atsushi Osaka, JP 282 747

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