US Patent Application No: 2012/0138,956

Number of patents in Portfolio can not be more than 2000

COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

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Abstract

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A compound semiconductor device includes: a substrate; an electron transit layer formed over the substrate; an electron supply layer formed over the electron transit layer; and a buffer layer formed between the substrate and the electron transit layer and including AlxGa1-xN(0≦x≦1), wherein the x value represents a plurality of maximums and a plurality of minimums in the direction of the thickness of the buffer layer, and the variation of x in any area having a 1 nm thickness in the buffer layer is 0.5 or less.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
FUJITSU LIMITEDKAWASAKI15595

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Imanishi, Kenji Kawasaki, JP 80 179
Miyajima, Toyoo - 23 11
Shimizu, Sanae - 15 7
Yamada, Atsushi Osaka, JP 301 843

Cited Art Landscape

Patent Info (Count) # Cites Year
 
SANKEN ELECTRIC CO., LTD. (5)
* 2010/0244,096 SEMICONDUCTOR DEVICE 0 2010
* 8,247,842 Nitride semiconductor device having graded aluminum content 0 2010
* 2011/0006,308 SEMICONDUCTOR DEVICE 2 2010
* 2011/0073,911 SEMICONDUCTOR DEVICE 0 2010
* 2013/0248,815 SEMICONDUCTOR PHOTOCATHODE AND METHOD FOR MANUFACTURING THE SAME 0 2013
 
FUJITSU LIMITED (1)
* 2011/0031,532 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 4 2010
 
LG INNOTEK CO., LTD. (1)
* 2009/0179,221 SEMICONDUCTOR LIGHT EMITTING DEVICE 1 2009
 
NATIONAL UNIVERSITY CORPORATION NAGOYA INSTITUTE OF TECHNOLOGY (1)
* 2011/0001,127 SEMICONDUCTOR MATERIAL, METHOD OF MAKING THE SAME, AND SEMICONDUCTOR DEVICE 4 2008
 
RENESAS ELECTRONICS CORPORATION (1)
* 2009/0045,438 FIELD EFFECT TRANSISTOR, AND MULTILAYERED EPITAXIAL FILM FOR USE IN PREPARATION OF FIELD EFFECT TRANSISTOR 41 2006
 
The Furukawa Electric Co., Ltd. (1)
* 2013/0307,024 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 0 2013
 
TRANSPHORM INC. (1)
* 2012/0126,239 LAYER STRUCTURES FOR CONTROLLING STRESS OF HETEROEPITAXIALLY GROWN III-NITRIDE LAYERS 2 2010
 
XEROX CORPORATION (1)
* 2003/0118,066 Graded semiconductor layers for reducing threshold voltage for a nitride-based laser diode structure 7 2001
* Cited By Examiner

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