STATIC INDUCTION TRANSISTOR WITH DIELECTRIC CARRIER SEPARATION LAYER
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United States of America Patent
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Issued Date -
Jun 7, 2012
app pub date -
Dec 3, 2010
filing date -
Dec 3, 2010
priority date (Note) -
Abandoned
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Abstract
A static induction transistor comprising: a region of semiconductor material having a first conductivity type; at least two spaced-apart gate regions formed in the region of semiconductor material, the gate regions having a second conductivity type that is opposite to the first conductivity type; at least one source region having the first conductivity type formed in the region of semiconductor material between the spaced-apart gate regions; a drain region having the first conductivity type formed in the region of semiconductor and spaced-apart from the source region to define a channel region therebetween; and a dielectric carrier separation layer formed at the periphery of the gate regions.
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