US Patent Application No: 2012/0139,040

Number of patents in Portfolio can not be more than 2000

INSULATED GATE TYPE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

ALSO PUBLISHED AS: 8278708

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Abstract

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In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is constituted by both the gate-purpose conductive layer and a cap insulating film for capping an upper surface of the gate-purpose conductive layer is projected from the major surface of the semiconductor substrate; a side wall spacer is provided on a side wall of the projected portion of the gate pillar; and the source-purpose conductive layer is connected to a contact region of the major surface of the semiconductor substrate, which is defined by the side wall spacer.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
RENESAS EASTERN JAPAN SEMICONDUCTOR, INC.TOKYO36
RENESAS ELECTRONICS CORPORATIONTOKYO12841

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Inagawa, Hiroshi Maebashi, JP 71 101
Machida, Nobuo Takasaki, JP 55 124
Oishi, Kentaro Tamamura, JP 48 205

Cited Art Landscape

Patent Info (Count) # Cites Year
 
MITSUBISHI DENKI KABUSHIKI KAISHA (1)
* 6,118,150 Insulated gate semiconductor device and method of manufacturing the same 20 1996
* Cited By Examiner

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