US Patent Application No: 2012/0139,040
Number of patents in Portfolio can not be more than 2000
INSULATED GATE TYPE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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Jun 7, 2012
Publication date -
Feb 15, 2012
filing date -
Feb 19, 2001
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13/396,825
serial no -
Granted
status (Latency Note)
Importance
Abstract
In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is constituted by both the gate-purpose conductive layer and a cap insulating film for capping an upper surface of the gate-purpose conductive layer is projected from the major surface of the semiconductor substrate; a side wall spacer is provided on a side wall of the projected portion of the gate pillar; and the source-purpose conductive layer is connected to a contact region of the major surface of the semiconductor substrate, which is defined by the side wall spacer.
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Cited Art Landscape
| Patent Info | (Count) | # Cites | Year |
|---|---|---|---|
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| * 6,118,150 Insulated gate semiconductor device and method of manufacturing the same | 22 | 1996 | |
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