Insulated gate type semiconductor device and method for fabricating the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO

8278708

APP PUB NO

20120139040A1

SERIAL NO

13396825

Stats

ATTORNEY / AGENT: (SPONSORED)

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Abstract

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In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is constituted by both the gate-purpose conductive layer and a cap insulating film for capping an upper surface of the gate-purpose conductive layer is projected from the major surface of the semiconductor substrate; a side wall spacer is provided on a side wall of the projected portion of the gate pillar; and the source-purpose conductive layer is connected to a contact region of the major surface of the semiconductor substrate, which is defined by the side wall spacer.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
RENESAS EASTERN JAPAN SEMICONDUCTOR, INC.TOKYO33
RENESAS ELECTRONICS CORPORATIONTOKYO12632

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Inagawa, Hiroshi Maebashi, JP 44 190
Machida, Nobuo Takasaki, JP 35 211
Oishi, Kentaro Tamamura, JP 30 281

Cited Art Landscape

Patent Info (Count) # Cites Year
 
SIEMENS AKTIENGESELLSCHAFT (1)
6541818 Field-effect transistor configuration with a trench-shaped gate electrode and an additional highly doped layer in the body region 19 2001
 
Siliconix Incorporated (1)
6084264 Trench MOSFET having improved breakdown and on-resistance characteristics 137 1998
 
SGS-THOMSON MICROELECTRONICS, INC. (1)
5648670 Trench MOS-gated device with a minimum number of masks 109 1995
 
FAIRCHILD SEMICONDUCTOR CORPORATION (2)
6188105 High density MOS-gated power device and process for forming same 129 1999
6437399 Semiconductor structures with trench contacts 94 2000
 
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (1)
5396093 Vertical DRAM cross point memory cell and fabrication method 114 1994
 
MOTOROLA, INC. (1)
5489790 Static-random-access memory cell 31 1995
 
INFINEON TECHNOLOGIES AG (2)
6576953 Vertical semiconductor component with source-down design and corresponding fabrication method 16 2001
6465843 MOS-transistor structure with a trench-gate-electrode and a limited specific turn-on resistance and method for producing an MOS-transistor structure 93 2001
 
NEXPERIA B.V. (2)
6251730 Semiconductor power device manufacture 84 1999
6541817 Trench-gate semiconductor devices and their manufacture 31 1999
 
DENSO CORPORATION (1)
6469345 Semiconductor device and method for manufacturing the same 29 2001
 
NXP B.V. (1)
5378655 Method of manufacturing a semiconductor device comprising an insulated gate field effect device 73 1994
 
ALPHA AND OMEGA SEMICONDUCTOR, LTD. (1)
5877528 Structure to provide effective channel-stop in termination areas for trenched power transistors 156 1997
 
RENESAS ELECTRONICS CORPORATION (2)
6168996 Method of fabricating semiconductor device 140 1998
6638850 Method of fabricating a semiconductor device having a trench-gate structure 32 2000
 
MITSUBISHI DENKI KABUSHIKI KAISHA (2)
* 6118150 Insulated gate semiconductor device and method of manufacturing the same 23 1996
5773851 Semiconductor device and manufacturing method thereof 31 1997
 
KABUSHIKI KAISHA TOSHIBA (1)
6211549 High breakdown voltage semiconductor device including first and second semiconductor elements 59 1998
 
TAMIRAS PER PTE. LTD., LLC (1)
6087224 Manufacture of trench-gate semiconductor devices 18 1999
 
Ipics Corporation (1)
5460985 Production method of a verticle type MOSFET 38 1993
 
MEGAMOS CORPORATION (1)
6051468 Method of forming a semiconductor structure with uniform threshold voltage and punch-through tolerance 60 1997
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
KABUSHIKI KAISHA TOSHIBA (1)
9379216 Semiconductor device and method for manufacturing same 0 2014
* Cited By Examiner

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