Insulated gate type semiconductor device and method for fabricating the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 2, 2012
Grant Date -
Jun 7, 2012
app pub date -
Feb 15, 2012
filing date -
Feb 19, 2001
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is constituted by both the gate-purpose conductive layer and a cap insulating film for capping an upper surface of the gate-purpose conductive layer is projected from the major surface of the semiconductor substrate; a side wall spacer is provided on a side wall of the projected portion of the gate pillar; and the source-purpose conductive layer is connected to a contact region of the major surface of the semiconductor substrate, which is defined by the side wall spacer.
First Claim
Family
International Classification(s)
Cited Art Landscape
| Patent Info | (Count) | # Cites | Year |
|---|---|---|---|
|
|
|||
| 6541818 Field-effect transistor configuration with a trench-shaped gate electrode and an additional highly doped layer in the body region | 20 | 2001 | |
|
|
|||
| 6084264 Trench MOSFET having improved breakdown and on-resistance characteristics | 144 | 1998 | |
|
|
|||
| 5648670 Trench MOS-gated device with a minimum number of masks | 112 | 1995 | |
|
|
|||
| 6188105 High density MOS-gated power device and process for forming same | 133 | 1999 | |
| 6437399 Semiconductor structures with trench contacts | 97 | 2000 | |
|
|
|||
| 5396093 Vertical DRAM cross point memory cell and fabrication method | 115 | 1994 | |
|
|
|||
| 5489790 Static-random-access memory cell | 32 | 1995 | |
|
|
|||
| 6576953 Vertical semiconductor component with source-down design and corresponding fabrication method | 17 | 2001 | |
| 6465843 MOS-transistor structure with a trench-gate-electrode and a limited specific turn-on resistance and method for producing an MOS-transistor structure | 101 | 2001 | |
|
|
|||
| 6251730 Semiconductor power device manufacture | 87 | 1999 | |
| 6541817 Trench-gate semiconductor devices and their manufacture | 34 | 1999 | |
|
|
|||
| 6087224 Manufacture of trench-gate semiconductor devices | 19 | 1999 | |
|
|
|||
| 6469345 Semiconductor device and method for manufacturing the same | 30 | 2001 | |
|
|
|||
| 5378655 Method of manufacturing a semiconductor device comprising an insulated gate field effect device | 81 | 1994 | |
|
|
|||
| 5877528 Structure to provide effective channel-stop in termination areas for trenched power transistors | 162 | 1997 | |
|
|
|||
| 6168996 Method of fabricating semiconductor device | 149 | 1998 | |
| 6638850 Method of fabricating a semiconductor device having a trench-gate structure | 35 | 2000 | |
|
|
|||
| * 6118150 Insulated gate semiconductor device and method of manufacturing the same | 26 | 1996 | |
| 5773851 Semiconductor device and manufacturing method thereof | 32 | 1997 | |
|
|
|||
| 6211549 High breakdown voltage semiconductor device including first and second semiconductor elements | 67 | 1998 | |
|
|
|||
| 5460985 Production method of a verticle type MOSFET | 39 | 1993 | |
|
|
|||
| 6051468 Method of forming a semiconductor structure with uniform threshold voltage and punch-through tolerance | 62 | 1997 | |
Patent Citation Ranking
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Apr 2, 2020 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Apr 2, 2024 |
| Fee | Large entity fee | small entity fee | micro entity fee |
|---|---|---|---|
| Surcharge - 7.5 year - Late payment within 6 months | $160.00 | $80.00 | $40.00 |
| Surcharge - 11.5 year - Late payment within 6 months | $160.00 | $80.00 | $40.00 |
| Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
| Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
Advertisement
Advertisement
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully