Insulated gate type semiconductor device and method for fabricating the same
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United States of America Patent
Stats
-
Oct 2, 2012
Grant Date -
Jun 7, 2012
app pub date -
Feb 15, 2012
filing date -
Feb 19, 2001
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is constituted by both the gate-purpose conductive layer and a cap insulating film for capping an upper surface of the gate-purpose conductive layer is projected from the major surface of the semiconductor substrate; a side wall spacer is provided on a side wall of the projected portion of the gate pillar; and the source-purpose conductive layer is connected to a contact region of the major surface of the semiconductor substrate, which is defined by the side wall spacer.
First Claim
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International Classification(s)
Cited Art Landscape
| Patent Info | (Count) | # Cites | Year |
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| 6541818 Field-effect transistor configuration with a trench-shaped gate electrode and an additional highly doped layer in the body region | 20 | 2001 | |
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| 6084264 Trench MOSFET having improved breakdown and on-resistance characteristics | 142 | 1998 | |
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| 5648670 Trench MOS-gated device with a minimum number of masks | 112 | 1995 | |
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| 6188105 High density MOS-gated power device and process for forming same | 133 | 1999 | |
| 6437399 Semiconductor structures with trench contacts | 97 | 2000 | |
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| 5396093 Vertical DRAM cross point memory cell and fabrication method | 115 | 1994 | |
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| 5489790 Static-random-access memory cell | 32 | 1995 | |
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| 6576953 Vertical semiconductor component with source-down design and corresponding fabrication method | 17 | 2001 | |
| 6465843 MOS-transistor structure with a trench-gate-electrode and a limited specific turn-on resistance and method for producing an MOS-transistor structure | 100 | 2001 | |
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| 6251730 Semiconductor power device manufacture | 87 | 1999 | |
| 6541817 Trench-gate semiconductor devices and their manufacture | 34 | 1999 | |
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| 6087224 Manufacture of trench-gate semiconductor devices | 19 | 1999 | |
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| 6469345 Semiconductor device and method for manufacturing the same | 30 | 2001 | |
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| 5378655 Method of manufacturing a semiconductor device comprising an insulated gate field effect device | 81 | 1994 | |
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| 5877528 Structure to provide effective channel-stop in termination areas for trenched power transistors | 162 | 1997 | |
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| 6168996 Method of fabricating semiconductor device | 149 | 1998 | |
| 6638850 Method of fabricating a semiconductor device having a trench-gate structure | 35 | 2000 | |
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| * 6118150 Insulated gate semiconductor device and method of manufacturing the same | 26 | 1996 | |
| 5773851 Semiconductor device and manufacturing method thereof | 32 | 1997 | |
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| 6211549 High breakdown voltage semiconductor device including first and second semiconductor elements | 67 | 1998 | |
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| 5460985 Production method of a verticle type MOSFET | 39 | 1993 | |
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| 6051468 Method of forming a semiconductor structure with uniform threshold voltage and punch-through tolerance | 62 | 1997 | |
Patent Citation Ranking
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