Insulated gate type semiconductor device and method for fabricating the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8278708
APP PUB NO 20120139040A1
SERIAL NO

13396825

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is constituted by both the gate-purpose conductive layer and a cap insulating film for capping an upper surface of the gate-purpose conductive layer is projected from the major surface of the semiconductor substrate; a side wall spacer is provided on a side wall of the projected portion of the gate pillar; and the source-purpose conductive layer is connected to a contact region of the major surface of the semiconductor substrate, which is defined by the side wall spacer.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddressTotal Patents
RENESAS ELECTRONICS CORPORATIONTOKYO12089
RENESAS SEMICONDUCTOR PACKAGE & TEST SOLUTIONS CO., LTD.TAKASAKI-SHI GUNMA, JP112

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Inagawa, Hiroshi Maebashi, JP 44 205
Machida, Nobuo Takasaki, JP 35 225
Oishi, Kentaro Tamamura, JP 30 289

Cited Art Landscape

Patent Info (Count) # Cites Year
 
SIEMENS AKTIENGESELLSCHAFT (1)
6541818 Field-effect transistor configuration with a trench-shaped gate electrode and an additional highly doped layer in the body region 20 2001
 
Siliconix Incorporated (1)
6084264 Trench MOSFET having improved breakdown and on-resistance characteristics 141 1998
 
SGS-THOMSON MICROELECTRONICS, INC. (1)
5648670 Trench MOS-gated device with a minimum number of masks 112 1995
 
FAIRCHILD SEMICONDUCTOR CORPORATION (2)
6188105 High density MOS-gated power device and process for forming same 132 1999
6437399 Semiconductor structures with trench contacts 97 2000
 
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (1)
5396093 Vertical DRAM cross point memory cell and fabrication method 115 1994
 
MOTOROLA, INC. (1)
5489790 Static-random-access memory cell 32 1995
 
INFINEON TECHNOLOGIES AG (2)
6576953 Vertical semiconductor component with source-down design and corresponding fabrication method 17 2001
6465843 MOS-transistor structure with a trench-gate-electrode and a limited specific turn-on resistance and method for producing an MOS-transistor structure 97 2001
 
NEXPERIA B.V. (2)
6251730 Semiconductor power device manufacture 87 1999
6541817 Trench-gate semiconductor devices and their manufacture 32 1999
 
TAMIRAS PER PTE. LTD., LLC (1)
6087224 Manufacture of trench-gate semiconductor devices 19 1999
 
DENSO CORPORATION (1)
6469345 Semiconductor device and method for manufacturing the same 30 2001
 
NXP B.V. (1)
5378655 Method of manufacturing a semiconductor device comprising an insulated gate field effect device 77 1994
 
ALPHA & OMEGA SEMICONDUCTOR, LTD. (1)
5877528 Structure to provide effective channel-stop in termination areas for trenched power transistors 161 1997
 
RENESAS ELECTRONICS CORPORATION (2)
6168996 Method of fabricating semiconductor device 145 1998
6638850 Method of fabricating a semiconductor device having a trench-gate structure 35 2000
 
MITSUBISHI DENKI KABUSHIKI KAISHA (2)
* 6118150 Insulated gate semiconductor device and method of manufacturing the same 24 1996
5773851 Semiconductor device and manufacturing method thereof 32 1997
 
KABUSHIKI KAISHA TOSHIBA (1)
6211549 High breakdown voltage semiconductor device including first and second semiconductor elements 66 1998
 
Ipics Corporation (1)
5460985 Production method of a verticle type MOSFET 39 1993
 
MEGAMOS CORPORATION (1)
6051468 Method of forming a semiconductor structure with uniform threshold voltage and punch-through tolerance 62 1997
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
KABUSHIKI KAISHA TOSHIBA (1)
9379216 Semiconductor device and method for manufacturing same 0 2014
* Cited By Examiner

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Apr 2, 2020
11.5 Year Payment $7400.00 $3700.00 $1850.00 Apr 2, 2024
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00