US Patent Application No: 2012/0139,508

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SEMICONDUCTOR APPARATUS

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Abstract

A device includes a first internal voltage generation circuit generating a first internal voltage in response to an external power supply voltage, a second internal voltage generation circuit generating a second internal voltage in response to the external power supply voltage, the second internal voltage being different in voltage level from the first internal voltage, and a preset signal generation circuit responding to a power-on of the external power supply voltage to the device and generating, independently of the first internal voltage, first and second preset signals that bring the first and the second internal voltage generation circuits into respective initial states, the preset signal generating circuit stopping generation of the first preset signal when the external power supply voltage reaches a first voltage level and stopping generation of the second preset signal when the external power supply voltage reaches a second voltage level different from the first voltage level.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
RAMBUS INC.LOS ALTOS, CA1206

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matano, Tatsuya Tokyo, JP 45 141

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