PROGRAMMING MEMORY CELLS WITH ADDITIONAL DATA FOR INCREASED THRESHOLD VOLTAGE RESOLUTION
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United States of America Patent
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app pub date -
Feb 9, 2012
filing date -
Oct 30, 2008
priority date (Note) -
Abandoned
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Abstract
Methods for programming memory and memory devices are provided. According to at least one such method, additional data is appended to original data and the resulting data is programmed in a selected memory cell. The appended data increases the program threshold voltage margin of the original data. The appended data can be a duplicate of the original data or logical zeros. When the selected memory cell is read, the memory control circuitry can read just the original data in the MSB field or the memory control circuitry can read the entire programmed data and ignore the LSB field, for example.
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